| PART |
Description |
Maker |
| ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD
170 MHz in-system prommable high density PLD
125 MHz in-system prommable high density PLD
100 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes
In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| W5232 W523X W5231 W5233 W5234 |
Power Speech LOW VOLTAGE ADPCM VOICE SYNTHESIZER
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (6 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (12 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (9 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (3 seconds @6.7K)
|
WINBOND[Winbond]
Winbond Electronics
|
| ISPLSI2096E-100LQ128 ISPLSI2096E-100LT128 ISPLSI20 |
In-SystemProgrammableSuperFASTHighDensityPLD
In-System Programmable SuperFAST?/a> High Density PLD
In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFAST⑩ High Density PLD
In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP128
In-System Programmable SuperFAST??High Density PLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
| SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V，温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V，温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度，高电压，标准恢复倍流整流（反向电5000V，温25℃时平均整流电流0.4A，高密度，高电压，标准恢复倍增整流器）
|
Semtech Corporation
Semtech, Corp.
|
| DK50-1.0 DK50-1.0M DK44-1.0 DK44-1.0M DK60-1.0 DK6 |
1.0mm High Density FLEX (300V, 105隆?C)
1.0mm High Density FLEX (300V, 105掳C)
1.0mm High Density FLEX (300V, 105°C)
|
Yamaichi Electronics Co., Ltd.
http://
|
| ISPLSI2064V-100LJ84 ISPLSI2064V-100LJ84I ISPLSI206 |
3.3V High Density Programmable Logic
3.3V High Density Programmable Logic 3.3高密度可编程逻辑
3.3V High Density Programmable Logic EE PLD, 15 ns, PQCC84
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| MCN51-8S3-PFA MCN51-16P2-DS MCN51-16P2-PFA MCN51-1 |
CAP 0.1UF 50V 20% Z5U RAD.20 .20X.20 BULK 高电流，高密度，电源连接
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 高电流，高密度，电源连接
High Current, High Density, Power Connectors 高电流，高密度，电源连接
High Current / High Density / Power Connectors
|
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| T2.5-4 T10-10 T10-6 T10-8 T25-12 T25-10 T16-10 T16 |
STA-KON Copper Tube Terminals
|
List of Unclassifed Manufacturers
|
| EDI3DG328V8D1 EDI3DG328V10D1 |
8Megx32 Synchronous High Density DRAM Modules 3.3V(125MHz,3.3V,8M x32同步高密度动态RAM模块)
8Megx32 Synchronous High Density DRAM Modules 3.3V(100MHz,3.3V,8M x32同步高密度动态RAM模块) 8Megx32同步高密度DRAM模块3.300MHz的，3.3分X32号，同步高密度动态内存模块）
|
Bourns, Inc.
|
